Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells-Reference-Cited by-同舟云学术

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Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells

Published:1988-03-20 Issue:Part 2, No. 3 Volume:27 Page:L300-L303
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hayakawa Toshiro,Takahashi Kosei,Suyama Takahiro,Kondo Masafumi,Yamamoto Saburo,Hijikata Toshiki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystallographic input data for (001)-, (110)- and (111)-oriented superlattices;Acta Crystallographica Section B Structural Science;2012-07-17

2. First principles calculation of the opto-electronic properties of (110) growth axis SiGe superlattices;Superlattices and Microstructures;2007-01

3. Polarization effects in near-ground-state quantum wire lasers;Applied Physics Letters;2000-11-06

4. 1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications;Microelectronics Journal;1997-10

5. Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices;Microelectronics Journal;1995-12

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