Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices-Reference-Cited by-同舟云学术

Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices

Published:1995-12 Issue:8 Volume:26 Page:811-820
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Grey R.,David J.P.R.,Hill G.,Pabla A.S.,Pate M.A.,Rees G.J.,Robson P.N.,Rodriguez-Girones P.J.,Sale T.E.,Woodhead J.,Fisher T.A.,Hogg R.A.,Mowbray D.J.,Skolnick M.S.,Whittaker D.M.,Willcox A.R.K.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. Observation of room temperature blue shift and bistability in a strained InGaAs-GaAs〈111〉 self-electro-optic effect device;Goossen;Appl. Phys. Lett.,1990

2. The potential of strain: piezoelectric semiconductor devices;Rees;ESSDERC,1994

3. Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructure;Caridi;Appl. Phys. Lett.,1990

4. Enhancement of heavy-hole-related excitonic optical transitions in (111)-oriented quantum wells;Hayakawa;Jpn. J. Appl. Phys.,1988

5. Reduction in threshold current density of quantum well lasers grown by molecular beam epitaxy on 0.5° misoriented (111)B substrates;Hayakawa;Jpn. J. Appl. Phys.,1987

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