Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy
3. High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well
4. Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices
5. Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
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1. Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells;Materials Science in Semiconductor Processing;2023-02
2. Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD;Microelectronics Journal;2006-10
3. Guide to the Literature of Piezoelectricity and Pyroelectricity. 23;Ferroelectrics;2005-08
4. Morphology and optical properties of GaAs layers grown on (1 1 1)A GaAs substrates in N2ambient by metalorganic chemical vapor deposition;Journal of Materials Science: Materials in Electronics;2004-05
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