Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference15 articles.
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1. Spectroscopy studies of strain-compensated mid-infrared QCL active regions on misoriented substrates;SPIE Proceedings;2013-12-18
2. Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs;SPIE Proceedings;2005-07-07
3. GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs;Applied Physics A;2005-06
4. InGaAsN on GaAs (111)B for telecommunication laser application;Journal of Crystal Growth;2005-05
5. Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates;Applied Physics Letters;2004-04-05
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