Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy-Reference-Cited by-同舟云学术

Confirmation of the pyroelectric coefficient of strained InxGa1−xAs/GaAs quantum well structures grown on (111)B GaAs by differential photocurrent spectroscopy

Published:2002-03 Issue:5 Volume:91 Page:3002-3006
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sánchez J. J.,Izpura J. I.,Tijero J. M. G.,Muñoz E.,Cho Soohaeng,Majerfeld A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1445278

Reference16 articles.

1. Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates

2. Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration

3. Photoinhibition of the quantum confined Stark effect in piezoelectric multiple quantum wells

4. Strain-generated electric fields in [111] growth axis strained-layer superlattices

5. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

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