Thermal behavior of fluorine in SiO2and Si investigated by the 19F(p,αγ) 16O reaction and secondary‐ion mass spectrometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349392
Reference17 articles.
1. Fluorine‐enhanced thermal oxidation of silicon in the presence of NF3
2. Radiation Response of MOS Capacitors Containing Fluorinated Oxides
3. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
4. Investigation of fluorine in SiO2and on Si surface by the19F(p,αγ)16O reaction, secondary‐ion mass spectrometry, and x‐ray photoelectron spectroscopy
5. Hot-electron hardened Si-gate MOSFET utilizing F implantation
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1. Diffusion of 18 elements implanted into thermally grown SiO[sub 2];Journal of Applied Physics;2003
2. Doping characteristics of BF/sub 2//sup +/ implants in >100< and >111< silicon;IEEE Transactions on Electron Devices;2001
3. The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium;Semiconductors;2000-05
4. Activation energy for fluorine transport in amorphous silicon;Applied Physics Letters;1999-12-06
5. Anomalous depth profile of implanted fluorine ions in SiO2/Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04
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