The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium-Reference-Cited by-同舟云学术

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The influence of electrically inactive impurities on the formation of donor centers in silicon layers implanted with erbium

Published:2000-05 Issue:5 Volume:34 Page:510-513
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.,Zakhar’in A. O.,Sobolev N. A.,Nikolaev Yu. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1188016.pdf

Reference18 articles.

1. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann, Appl. Phys. Lett. 43, 943 (1983).

2. N. A. Sobolev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 1153 (1995) [Semicond. 29, 595 (1995)].

3. O. V. Aleksandrov, N. A. Sobolev, E. I. Shek, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 876 (1996) [Semicond. 30, 468 (1996)].

4. J. Michel, L. V. C. Assali, M. T. Morse, et al., Semiconductors and Semimetals (Academic, San Diego, 1998), Vol. 49, p. 111.

5. F. Priolo, S. Coffa, G. Franzo, et al., J. Appl. Phys. 74, 4936 (1993).

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