Hot-electron hardened Si-gate MOSFET utilizing F implantation-Reference-Cited by-同舟云学术

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Hot-electron hardened Si-gate MOSFET utilizing F implantation

Published:1989-04 Issue:4 Volume:10 Page:141-143
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nishioka Y.,Ohyu K.,Ohji Y.,Natuaki N.,Mukai K.,Ma T.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1377/00031697.pdf?arnumber=31697

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