Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332936
Reference5 articles.
1. The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurements
2. Determination of deep energy levels in Si by MOS techniques
3. Solid Solubilities of Impurity Elements in Germanium and Silicon*
4. The pearson IV distribution and its application to ion implanted depth profiles
5. Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination
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2. Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes;Nanoscale Research Letters;2017-09-04
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5. Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting;Applied Physics A;2013-04-06
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