Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination-Reference-Cited by-同舟云学术

Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination

Published:1983-09-15 Issue:6 Volume:43 Page:549-551
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wilson R. G.,Sadana D. K.,Sigmon T. W.,Evans C. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.94415

Reference5 articles.

1. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon

2. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon

3. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions

4. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers

5. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si;Journal of Applied Physics;1987-02-15

2. Characterization of depth profiles and redistribution during thermal processing of aluminum implanted into silicon;Journal of Applied Physics;1987-02

3. The regrowth of implantation damage in silicon studied via silver depth profiling;Journal of Applied Physics;1986-10-15

4. Zone refining and enhancement of solid phase epitaxial growth rates in Au‐implanted amorphous Si;Applied Physics Letters;1986-01-13

5. Further evidence of chromium, manganese, iron, and zinc redistribution in indium phosphide after annealing;Journal of Applied Physics;1985-02-15