Characterization of depth profiles and redistribution during thermal processing of aluminum implanted into silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338145
Reference14 articles.
1. CARRIER CONCENTRATION PROFILES OF ION‐IMPLANTED SILICON
2. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
3. Channeled‐ion implantation of group‐III and group‐V ions into silicon
4. Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation
5. Anomalous migration of ion‐implanted Al in Si
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate;Defect and Diffusion Forum;2007-04
2. Dopants;Computational Microelectronics;2004
3. Study of the diffusion behaviour of aluminium in silicon up to 900°C by nuclear reaction analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03
4. Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Al‐Based Precipitate Evolution during High Temperature Annealing of Al Implanted in Si;Journal of The Electrochemical Society;1993-08-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3