Characteristics of a field-effect transistor with stacked InAs quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1572468
Reference12 articles.
1. Si single-electron transistors with in-plane point-contact metal gates
2. InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
3. Resonant tunneling of Si nanocrystals embedded in Al2O3 matrix synthesized by vacuum electron-beam co-evaporation
4. Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure
5. Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors
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1. Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor;Chinese Physics Letters;2012-08
2. Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots;Japanese Journal of Applied Physics;2010-10-20
3. OPTICAL AND ELECTRICAL INVESTIGATION OF LOW DIMENSIONAL SELF-ASSEMBLEDInAsQUANTUM DOT FIELD EFFECT TRANSISTORS;International Journal of Nanoscience;2006-12
4. Quantum dot molecules: A potential pathway towards terahertz devices;Physica E: Low-dimensional Systems and Nanostructures;2006-10
5. Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules;MRS Proceedings;2006
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