Si single-electron transistors with in-plane point-contact metal gates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1359777
Reference14 articles.
1. Single‐electron effects in a point contact using side‐gating in delta‐doped layers
2. On the origin of tunneling barriers in silicon single electron and single hole transistors
3. A silicon Coulomb blockade device with voltage gain
4. Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas
5. Stochastic Coulomb blockade in a double quantum dot
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