InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.1506/fulltext
Reference23 articles.
1. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
2. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
3. Critical layer thickness for self-assembled InAs islands on GaAs
4. Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
5. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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