Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well-Reference-Cited by-同舟云学术

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Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Published:2013-01-21 Issue:3 Volume:113 Page:033701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jin Dong-Dong,Jiang Chao,Li Guo-Dong,Zhang Liu-Wan,Yang Tao,Liu Xiang-Lin,Yang Shao-Yan,Zhu Qin-Sheng,Wang Zhan-Guo

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4775790

Reference22 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition

3. Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots

4. Matrix effects on the structural and optical properties of InAs quantum dots

5. Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum Dots

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm;Semiconductor Science and Technology;2015-09-21

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