Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm-Reference-Cited by-同舟云学术

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Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm

Published:2015-09-21 Issue:10 Volume:30 Page:105033
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ma Liang,Zhang Xuehong,Li Honglai,Tan Huang,Yang Yankun,Xu Yadan,Hu Wei,Zhu Xiaoli,Zhuang Xiujuan,Pan Anlian

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=10/a=105033/pdf

Reference43 articles.

1. Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm

2. A nanoscale combing technique for the large-scale assembly of highly aligned nanowires

3. Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature

4. Wavelength-Converted/Selective Waveguiding Based on Composition-Graded Semiconductor Nanowires

5. Wavelength Tunable Single Nanowire Lasers Based on Surface Plasmon Polariton Enhanced Burstein–Moss Effect

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