Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure-Reference-Cited by-同舟云学术

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Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure

Published:1997-06-30 Issue:Part 1, No. 6B Volume:36 Page:4134-4138
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yoh Kanji,Konda Jun,Shiina Sanshiro,Nishiguchi Norihiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Feasibility study of a semiconductor quantum bit structure based on a spin FET embedded with self-assembled InAs quantum dots;Journal of Crystal Growth;2007-04

2. Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy;Applied Physics Letters;2005-11-07

3. Quantum entanglement formation by repeated spin blockade measurements in a spin field-effect transistor structure embedded with quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2005-11

4. Capacitance and tunneling spectroscopy of InAs quantum dots;Journal of Applied Physics;2004-05-15

5. Characteristics of a field-effect transistor with stacked InAs quantum dots;Applied Physics Letters;2003-05-05

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