Kinetics of silicon‐germanium deposition by atmospheric‐pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105986
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1. Si/siGe heterojunction bipolar transistor with base doping highly exceeding emitter doping concentration
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3. Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors
4. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
5. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
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