A growth kinetics model of rate decomposition for Si 1− x Ge x alloy based on dimer theory
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/1/015101/pdf
Reference14 articles.
1. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
2. Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition
3. Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces
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