Fabrication of high quality strained SiGe on Si substrate by RPCVD
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/s11434-012-5020-7.pdf
Reference25 articles.
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3. Cheng Z, Currie M, Leitz C, et al. Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates. IEEE Electr Device L, 2001, 22: 321–323
4. Spadafora M, Terrasi A, Mirabella S, et al. Dry oxidation of MBE-SiGe films: Rate enhancement, Ge redistribution and defect injection. Mat Sci Semicon Proc, 2005, 8: 219–224
5. Kasper E, Lyutovich K. Strain adjustment with thin virtual substrates. Solid State Electron, 2004, 48: 1257–1263
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