Position‐dependent electronic properties of hydrogenated amorphous siliconp‐i‐ndiodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356316
Reference15 articles.
1. Schottky‐barrier profile ina‐silicon alloys
2. Measurements of depletion layers in hydrogenated amorphous silicon
3. Field-profile determination in amorphous Si-Ge alloy Schottky barriers
4. Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitance
5. Transient-photocurrent studies ina−Si:H
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si:H p–i–n solar cell;Solar Energy Materials and Solar Cells;2000-03
2. Planar anisotropy in amorphous semiconductors;Physica B: Condensed Matter;1996-05
3. Spectral characteristics of photosensitive a-si devices;Measurement Techniques;1995-11
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