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Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si:H p–i–n solar cell

  • Published:2000-03 Issue:3 Volume:61 Page:287-300
  • ISSN:0927-0248
  • Container-title:Solar Energy Materials and Solar Cells
  • language:en
  • Short-container-title:Solar Energy Materials and Solar Cells

Author:

Prentice J.S.C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference52 articles.

1. J.S.C. Prentice, Ph.D. Thesis, Department of Physics, Rand Afrikaans University, 1999.

2. J.D. Saunderson, Ph.D. Thesis, Department of Physics, Rand Afrikaans University, 1997.

3. Proceedings of the 12th European Photovoltaic Solar Energy Conference;Stiebig,1994

4. Analysis of TCO/p(a-Si:C:H) heterojunction and its influence on p-i-n a-Si:H solar cell performance

5. Proceedings of the 13th European Photovoltaic Solar Energy Conference;Ray,1995

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1. Optimizing the Parameters of Core-Shell Nanoparticles with Different Algorithms to Enhance Performance of Thin-Film Solar Cells;2024 International Conference on Advances in Computing, Communication, Electrical, and Smart Systems (iCACCESS);2024-03-08

2. Influence of absorber doping in a-SiC:H/a-Si:H/a-SiGe:H solar cells;Journal of Semiconductors;2012-04

3. A TCAD-based modeling of GaN/InGaN/Si solar cells;Semiconductor Science and Technology;2012-02-03

4. Computer analysis of thin-film amorphous silicon heterojunction solar cells;Journal of Physics D: Applied Physics;2011-03-23

5. Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model;Journal of Applied Physics;2002-09
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