Transient-photocurrent studies ina−Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.29.826/fulltext
Reference15 articles.
1. Drift mobility techniques for the study of electrical transport properties in insulating solids
2. Dispersive (non-Gaussian) transient transport in disordered solids
3. Stochastic Transport in a Disordered Solid. I. Theory
4. A physical interpretation of dispersive transport in disordered semiconductors
5. Carrier propagation in sputtereda-Si:H
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1. Photoinduced Metastable States in Amorphous Organic Polysilanes Studied by the Transient Photocurrent Technique;Japanese Journal of Applied Physics;2002-09-15
2. Monte Carlo simulations of Meyer-Neldel effect on carrier time-of-flight in a-Si:H;Journal of Non-Crystalline Solids;1997-11
3. Position‐dependent electronic properties of hydrogenated amorphous siliconp‐i‐ndiodes;Journal of Applied Physics;1994-02-15
4. Power-law dependence of persistent photoconductivity on exposure time in compensated a-Si : H;Solid State Communications;1993-06
5. Hole transport in microcrystalline chlorophyll a;Applied Physics Letters;1993-05-03
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