Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature-Reference-Cited by-同舟云学术

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Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Published:2010-11-29 Issue:22 Volume:97 Page:222109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sung Sang-Yun,Kim Se-Yun,Jo Kwang-Min,Lee Joon-Hyung,Kim Jeong-Joo,Kim Sang-Gon,Chai Kyoung-Hoon,Pearton S. J.,Norton D. P.,Heo Young-Woo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3521310

Reference21 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors

3. Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors

4. Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers

5. Transfer characteristics and bias-stress stability of amorphous indium zinc oxide thin-film transistors

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