Electrical investigation of V-defects in GaN using Kelvin probe and conductive atomic force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2953081
Reference16 articles.
1. Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
2. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
3. Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
4. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
5. Spatial distribution of the luminescence in GaN thin films
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