Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100733
Reference14 articles.
1. An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium
2. Properties of Epitaxial Gallium Arsenide from Trimethylgallium and Arsine
3. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
4. Residual shallow acceptors in GaAs layers grown by metal‐organic vapor phase epitaxy
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Intrinsic carbon incorporation in very high purity MOVPE GaAs;Journal of Crystal Growth;1992-11
2. Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region;Applied Physics Letters;1992-06-22
3. Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine;Journal of Electronic Materials;1992-03
4. Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition;Journal of Electronic Materials;1992-02
5. Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1991-09
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