Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Optimization of buffer layers for AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors by atmospheric pressure metalorganic chemical vapor deposition

Published:1992-02 Issue:2 Volume:21 Page:199-203
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Pan N.,Jackson G. S.,Carter J.,Hendriks H.,Brierley S. K.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02655837.pdf

Reference14 articles.

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3. B. Van Zeghbroeck, W. Patrick, H. Meier and P. Vettiger, IEEE Electron Dev. Lett.EDL-8, 118 (1987).

4. R. Fauquembergue, M. Pernisek, J. L. Thobel and P. Bourel, in 14th Intl. Symp. on Gallium Arsenide and Related Com- pounds 1987, Inst. Phys. Conf. Ser. No.91, p. 753.

5. J. Chang, R. Stall, S. R. Forrest, J. Long, C. L. Cheng, G. Guth, R. Wunder and V. G. Riggs, IEEE Electron Dev. Lett.EDL-6, 384 (1985).

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1. Current-driven plasma instabilities in superconducting systems;Physica B: Condensed Matter;1994-02

2. Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te asn‐type dopant by low‐pressure metal organic chemical vapor deposition;Journal of Applied Physics;1994-01