Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99449
Reference14 articles.
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4. Structural, electrical, and optical properties ofa-Si1−xGex:H and an inferred electronic band structure
5. Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges
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1. Interelectrode separation effects on a-SiGe:H films prepared by plasma chemical vapor deposition;Thin Solid Films;1998-06
2. A systematic investigation of the role of material parameters in metastability of hydrogenated amorphous silicon;Journal of Non-Crystalline Solids;1994-07
3. Optoelectronic Properties of Amorphous SiGec Alloys;MRS Proceedings;1992
4. Preparation of improved quality a-SiGe: H alloy films for device applications;Solar Energy Materials;1991-12
5. Effect of hydrogen content on the light induced defect generation in direct current magnetron reactively sputtered hydrogenated amorphous silicon thin films;Journal of Applied Physics;1990-09
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