Author:
Kolodzey J.,Schwarz R.,Wang F.,Muschik T.,Krajewski J.,Shekhar R.,Barteau M.,Plättner R.,Günzel E.
Abstract
ABSTRACTWe describe the optoelectronic characteristics of hydrogenated amorphous silicon germanium carbon (a.Si1-x-yGexCy:H) alloys prepared by plasma deposition from SiH4/GeH4/CH4/H2 gas mixtures. a-Si1-x-yGexCy:H is a homogeneous random alloy having a variable optical gap depending on composition, with properties similar to those of amorphous Si-Ge alloys of the same optical gap but with improved thermal stability. Calculations show that if the ratio of Ge/C atomic fractions is 8.2, the average bond length matches that of unalloyed amorphous a-Si:H with the possibility of reduced defect densities at heterointerfaces. After light-soaking with high intensity white light, a sample having a 1.3 eV optical gap exhibited no Staebler-Wronski change in its properties.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. 2. Fischer T. , Muschik T. , Hanesch P. , Kolodzey J. , Schwarz R. , Neff G. , Schneider H. , and Stanger M. , Proc. 10th European Conf. on Photovoltaics (ECPV), Lisbon, Apr., 1991.
2. Density of the gap states in undoped and doped glow discharge a-Si:H
3. Steady‐state photocarrier grating technique for diffusion‐length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi‐insulating GaAs