Preparation of improved quality a-SiGe: H alloy films for device applications
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
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2. Guiding principle for preparing highly photosensitive Si-based amorphous alloys
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4. Local bonding of hydrogen in a-Si:H, a-Ge:H and a-Si, Ge:H alloy films
5. Electron spin resonance (ESR and LESR) studies in a-Si1−xGex:H
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1. Theoretical investigation of silicon thin film solar cell for improving short and long wavelength response;Current Applied Physics;2023-06
2. Hydrogenated Amorphous Silicon Germanium Active Layer for Top Cell of a Multi Junction Cell Structure;Journal of Nanoscience and Nanotechnology;2016-05-01
3. Interelectrode separation effects on a-SiGe:H films prepared by plasma chemical vapor deposition;Thin Solid Films;1998-06
4. Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution;Japanese Journal of Applied Physics;1995-11-15
5. Photogeneration and recombination of carriers in hydrogenated amorphous silicon germanium alloys;Solar Energy Materials and Solar Cells;1993-08
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