Effect of hydrogen content on the light induced defect generation in direct current magnetron reactively sputtered hydrogenated amorphous silicon thin films-Reference-Cited by-同舟云学术

Effect of hydrogen content on the light induced defect generation in direct current magnetron reactively sputtered hydrogenated amorphous silicon thin films

Published:1990-09 Issue:5 Volume:68 Page:2255-2264
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pinarbasi Mustafa,Kushner Mark J.,Abelson John R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.346530

Reference36 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon

3. Light‐induced dangling bonds in hydrogenated amorphous silicon

4. Observation of photoinduced changes in the bulk density of gap states in hydrogenated amorphous silicon

5. Light‐induced radiative recombination centers in hydrogenated amorphous silicon

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