Influence of substrate temperature on growth of a-Si:H films by reactive facing target sputtering deposition
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-010-0193-z.pdf
Reference28 articles.
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1. Hydrogen effect on structural and optical properties of in-situ fabricated nc-Si:H prepared by facing targets sputtering;Journal of Non-Crystalline Solids;2022-04
2. Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells;Progress in Photovoltaics: Research and Applications;2020-06-02
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4. Effects of ion bombardment on microcrystalline silicon growth by inductively coupled plasma assistant magnetron sputtering;Science China Physics, Mechanics and Astronomy;2012-09-16
5. Structural evolution and electronic properties of phosphorus-doped hydrogenated amorphous silicon thin films deposited by PECVD;Science China Technological Sciences;2012-09-07
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