Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=3/a=031301/pdf
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1. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%
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4. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
5. >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared
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