Hydrogen effect on structural and optical properties of in-situ fabricated nc-Si:H prepared by facing targets sputtering-Reference-Cited by-同舟云学术

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Hydrogen effect on structural and optical properties of in-situ fabricated nc-Si:H prepared by facing targets sputtering

Published:2022-04 Issue: Volume:582 Page:121459
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Meng Linghai,Cheng Haijuan,Liu Shiyu,Wu Yong,Li Dong,Fu Jianbo,Jiang Shengxiang,Zong Hua,Zhang Mengjiao

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Tunable photoluminescence from nc-Si/a-SiNx:H quantum dot thin films prepared by ICP-CVD;Sain;Phys. Chem. Chem. Phys.,2013

2. Stability of nc-Si:H TFTs with silicon nitride gate dielectric;Lee;IEEE Trans. Electron Devices,2017

3. A simple optimization of triple-junction solar cell nc-Si:H/a-Si:H/a-SiGe:H using computer modeling and robust design;Abuzairi;Adv. Mat. Res.,2014

4. Effect of silane flow rate on microstructure of silicon films deposited by HWCVD;Gogoi;J. Non-Cryst Solids,2012

5. Enhancement of porous silicon photoluminescence by chemical and electrochemical infiltration of conducting polymers;Harraz;Scr. Mater.,2013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells;Solar Energy Materials and Solar Cells;2024-01

2. In-situ fabricated amorphous silicon quantum dots embedded in silicon nitride matrix: Photoluminescence control and electroluminescence device fabrication;Journal of Luminescence;2023-09

3. Understanding of deposition mechanism of vanadium on LiF with large mismatch by facing target sputtering (FTS);Applied Surface Science;2023-05

4. Enhanced electrical stability of thin film transistors based on nanocrystalline silicon films;Semiconductor Science and Technology;2023-01-27

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