In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3627171
Reference29 articles.
1. Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices
2. Growth of short-period InAs∕GaSb superlattices
3. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
4. Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
5. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
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1. Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain;Opto-Electronics Review;2024-01-03
2. Determination of the Strain Influence on the InAs/InAsSb Type-II Superlattice Effective Masses;Sensors;2022-10-27
3. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs;Applied Physics Letters;2021-05-17
4. Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection;Infrared Physics & Technology;2018-12
5. 1/f Noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors;Optical and Quantum Electronics;2017-12-30
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