Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3267103
Reference5 articles.
1. Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors
2. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range
3. Proceedings of the IRE;Sah C. -T.,1957
4. Analysis of Recombination Processes in 0.5–0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb
5. SILICON (Si)
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