Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors-Reference-Cited by-同舟云学术

Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors

Published:2009-03 Issue:7 Volume:311 Page:1897-1900
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Haugan H.J.,Elhamri S.,Ullrich B.,Szmulowicz F.,Brown G.J.,Mitchel W.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

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