Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs-Reference-Cited by-同舟云学术

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Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs

Published:2021-05-17 Issue:20 Volume:118 Page:203102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kwan D. C. M.¹^ORCID,Kesaria M.¹^ORCID,Anyebe E. A.²^ORCID,Alshahrani D. O.¹,Delmas M.¹,Liang B. L.³^ORCID,Huffaker D. L.¹

Affiliation:

1. School of Physics and Astronomy, Cardiff University, The Parade, Cardiff CF24 3AA, United Kingdom

2. School of Engineering, Cardiff University, The Parade, Cardiff CF24 3AA, United Kingdom

3. California NanoSystems Institute, University of California, Los Angeles, California 90095, USA

Funder

Ser Cymru national research network in advanced materials

H2020 Marie Skłodowska-Curie Actions

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0045703

Reference55 articles.

1. A new semiconductor superlattice

2. InAs/GaSb type-II superlattice infrared detectors: Future prospect

3. Type-II superlattice photodetectors versus HgCdTe photodiodes

4. InAs/GaSb Type-II Superlattice Detectors

5. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice;Applied Physics Letters;2024-06-17

2. Multi-technique characterisation of InAs-on-GaAs wafers with circular defect pattern;Opto-Electronics Review;2024-01-03

3. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform;Scientific Reports;2022-07-08

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