Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection-Reference-Cited by-同舟云学术

Influence of shallow versus deep etching on dark current and quantum efficiency in InAs/GaSb superlattice photodetectors and focal plane arrays for long wavelength infrared detection

Published:2018-12 Issue: Volume:95 Page:158-163
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Höglund L.,Rodriguez J.B.,Marcks von Würtemberg R.,Naureen S.,Ivanov R.,Asplund C.,Alchaar R.,Christol P.,Rouvié A.,Brocal J.,Saint-Pé O.,Costard E.

Funder

ESA

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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3. Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier;Nguyen;Appl. Phys. Lett.,2007

4. W-Structured type-II superlattice based long and very-long wavelength infrared photodiodes;Aifer;Proc. SPIE,2005

5. A high-performance long wavelength superlattice complementary barrier infrared detector;Ting;Appl. Phys. Lett.,2009

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