Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs Ions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653780
Reference4 articles.
1. Ion Transport Phenomena in Insulating Films
2. Effect of ion-implantation into thermal SiO2-films on sodium ion drift
3. A quasi-static technique for MOS C-V and surface state measurements
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