Positive charges at buried oxide interface of RESURF: An analytical model for the breakdown voltage
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Surface field distribution and breakdown voltage of RESURF LDMOSFETs
2. Optimization of RESURF LDMOS transistors: an analytical approach
3. The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel
4. Injected charges in partial SOI LDMOSFETs: A new technique for improving the breakdown voltage
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1. Equivalent model and limit for the SOI lateral power device using high-k dielectric;Results in Physics;2019-12
2. An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars;Superlattices and Microstructures;2017-12
3. RF dual-gate-trench LDMOS on InGaAs with improved performance;Indian Journal of Physics;2017-07-29
4. Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage;Superlattices and Microstructures;2016-03
5. Upper drift region double step partial SOI LDMOSFET: A novel device for enhancing breakdown voltage and output characteristics;Superlattices and Microstructures;2016-01
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