Surface field distribution and breakdown voltage of RESURF LDMOSFETs
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
1. Effects of drift region parameters on the static properties of power LDMOST
2. An analytical model of the breakdown voltage and minimum epi layer length for RESURF pn diodes
3. Calculation of avalanche breakdown voltages of silicon p-n junctions
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