Analytical model of buried air partial SOI LDMOS-Reference-Cited by-同舟云学术

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Analytical model of buried air partial SOI LDMOS

Published:2019-08 Issue: Volume:132 Page:106162
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Xing Jingyu,Duan Baoxing,Dong Ziming,Wang Xiameng,Yang Yintang

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Science Foundation for Distinguished Young Scholars of Shaanxi Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. An integrated SOI high voltage device with a ring drain;Fang,2009

2. SOI based technology for Smart Power applications;Wessels,2007

3. SOI-based devices and technologies for High Voltage ICs;Udrea,2007

4. Wide Band Gap power semiconductor devices;Millán,2013

5. New concept for improving characteristics of high-voltage power devices by buried layers modulation effect;Duan,2006

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer;Micromachines;2023-04-20

2. Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-07-08

3. Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage;IEEE Access;2020

4. Unified Analytical Model for SOI LDMOS With Electric Field Modulation;IEEE Journal of the Electron Devices Society;2020

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