Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2712788
Reference15 articles.
1. Diffraction Grating Handbook, 4th ed., edited by C. Palmer (Richardson Grating Laboratory, New York, 2000), p. 119–123.
2. Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free‐carrier gratings
3. Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence
4. Modeling of threading dislocation reduction in growing GaN layers
5. Degradation in AlGaInN lasers
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