Degradation in AlGaInN lasers-Reference-Cited by-同舟云学术

Degradation in AlGaInN lasers

Published:2003-11-24 Issue:7 Volume: Page:2292-2295
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Takeya Motonobu,Mizuno Takashi¹,Sasaki Tomomi¹,Ikeda Shinro¹,Fujimoto Tsuyoshi¹,Ohfuji Yoshio¹,Oikawa Kenji¹,Yabuki Yoshifumi¹,Uchida Shiro¹,Ikeda Masao¹

Affiliation:

1. Development Center, Sony Shiroishi Semiconductor Inc., 3‐53‐2 Shiratori, Shiroishi‐shi, Miyagi‐ken, 989‐0734 Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303324

Reference13 articles.

1. Blue-Violet Laser Diodes Suitable for Blu-ray Disk

2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

3. O. H.Nam M. D.Bremser T.Zheleva andR. F.Davis D‐5 June 25–27 Colorado State University: presented at 39th Electronic Material Conference (1997).

4. Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy

5. T.Gehrke K. J.Linthicum D. B.Thomson P.Rajagopal A. D.Batchelor andR. F.Davis MRS Internet J. Semicond. Res. 4S1 G3.2 (1999).

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01

2. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives;physica status solidi (a);2022-02-24

3. Physics and Technology of AlGaInN‐Based Laser Diode;digital Encyclopedia of Applied Physics;2021-06-28

4. New mechanisms of cavity facet degradation for GaN-based laser diodes;Journal of Applied Physics;2021-06-14

5. Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs;Reliability of Semiconductor Lasers and Optoelectronic Devices;2021