Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1628391
Reference16 articles.
1. Implantation and transient B diffusion in Si: The source of the interstitials
2. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
3. Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2or Si++B+
4. Electrical activation of boron-implanted silicon during rapid thermal annealing
5. High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
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