Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si-Reference-Cited by-同舟云学术

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Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Published:1986-05-19 Issue:20 Volume:48 Page:1360-1361
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fischer R.,Kopp W.,Morkoç H.,Pion M.,Specht A.,Burkhart G.,Appelman H.,McGougan D.,Rice R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96909

Reference5 articles.

1. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

2. Structural properties of GaAs on Si and Ge substrates

3. Room‐temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

4. Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

5. Dislocation reduction in epitaxial GaAs on Si(100)

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