Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate-Reference-Cited by-同舟云学术

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Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate

Published:1985-11-15 Issue:10 Volume:47 Page:1031-1033
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Windhorn T. H.,Metze G. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.96368

Reference2 articles.

1. AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

2. Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy

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