Compositional influence on photoluminescence linewidth and Stokes shift in InxAlzGa1−x−zAs/InyAluGa1−u−yAs/InP heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359533
Reference20 articles.
1. MBE growth of graded index AlGaInAs MQW lasers on InP
2. Photoluminescence and X-ray diffraction studies of MBE-grown compressively strained InGaAs and InGaAlAs quantum wells for 1.55 μm laser diode applications
3. Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
4. Photoluminescence and double‐crystal x‐ray study of InGaAs/InP: Effect of mismatch strain on band gap
5. Composition dependence of band gap and type of lineup in In1−x−yGaxAlyAs/InP heterostructures
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1. Influence of substrate misorientation on vibrational properties of In1−x−yGaxAlyAs grown on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-01
2. Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing;Journal of Applied Physics;1999-09
3. Molecular beam epitaxial growth of In1−x−yGaxAlyAs: effects of substrate temperature and V/III ratio;Materials Chemistry and Physics;1999-04
4. V/III ratio effects on the growth of In1−x−yGaxAlyAs on InP substrates by molecular beam epitaxy;Microelectronics Journal;1998-11
5. Photoluminescence and X-ray diffraction analysis of In1−x−yGaxAlyAs/InP structures grown by molecular beam epitaxy;Microelectronics Journal;1998-08
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