Photoluminescence and X-ray diffraction analysis of In1−x−yGaxAlyAs/InP structures grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
1. Preparation and properties of molecular beam epitaxy grown (AI0.5Ga0.5)0.48In0.52As;Barnard;IEEE Electron Device Lett.,1982
2. Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InP;Olego;Appl. Phys. Lett.,1982
3. Optically pumped 1.55 μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy;Alavi;Appl. Phys. Lett.,1983
4. Growth studies of (Al,Ga,In)As on InP by molecular beam epitaxy;Reithmaier;J. Crystal Growth,1993
5. Molecular beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates;Chua;J. Vac. Sci. Technol. B,1996
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